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By Reis R., Jess J.A.G.

Layout of process on a Chip is the 1st of 2 volumes addressing the layout demanding situations linked to new generations of the semiconductor know-how. some of the chapters are the compilations of tutorials provided at workshops in Brazil within the contemporary years through favourite authors from worldwide. specifically the 1st e-book bargains with parts and circuits. equipment types need to fulfill the stipulations to be computationally good value as well as be exact and to scale over a variety of generations of know-how. moreover the publication addresses problems with the parasitic habit of deep sub-micron parts, resembling parameter adaptations and sub-threshold results. in addition a number of authors take care of goods like combined sign elements and stories. We finish up with an exposition of the know-how difficulties to be solved if our neighborhood desires to keep the velocity of the "International know-how Roadmap for Semiconductors" (ITRS).

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Chapter 2 ACKNOWLEDGMENTS Many people have contributed to, and are continuing to contribute to, VBIC, including Jerry Seitchik, Derek Bowers, Mark Dunn, Mark Foisy, Ian Getreu, Marc McSwain, Shahriar Moinian, Kevin Negus, James Parker, David Roulston, Michael Schröter, Shaun Simpkins, Paul van Wijnen, and Larry Wagner. 11. REFERENCES de Graaff, H. C. and Kloosterman, W. J. (1985) New formulation of the current and charge relations in bipolar transistors for modeling for CACD purposes. IEEE Trans.

20, 77-89. Jeong, H. and Fossum, J. G. (1989) A charge-based large-signal bipolar transistor model for device and circuit simulation. IEEE Trans. ED, 36, 124-31. Kloosterman, W. J. and de Graaff, H. C. (1988) Avalanche multiplication in a compact bipolar transistor model for circuit simulation. Proc. IEEE BCTM, 103-6. Kull, G. , Nagel, L. , Prendergast, E. , and Dirks, H. K. (1985) A unified circuit model for bipolar transistors including quasi-saturation effects. IEEE Trans. ED, 32, 1103-13.

Self heating is significant for GaAs HBTs, because the thermal conductivity of GaAs is relatively low. In contrast to silicon BJTs, GaAs HBTs have a negative temperature coefficient for ` = Ic ⁄ Ib. This means that for a fixed base current drive the collector current Ic decreases as temperature increases. Figure 8 shows output characteristics of a GaAs HBT with Ib is swept from 20 to 100µA in steps of 20µA. At low Ic there is little self heating, but at high Ic there is significant self heating, which causes ` and therefore Ic to decrease, which causes the output conductance g o to become negative.

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