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339-360; G. Brunk, H. Liibbig, J.. Low Temp. Phys. 42 (1981) pp. 179-185; G. Brunk, Ch. Zurbriigg, H. Liibbig, IEEE Trans. Magn. MAG-25 (1989) pp. 1420-1423 O. Jablonski, J. Appl. Phys. 53 (1982) pp. 7458-7463; G, Brunk, Proc. IC SQUIO'85 (1985) pp. 77-82; H. Kratz, W. Jutzi, IEEE Trans. Magn. MAG-23 (1987) pp. 731-734; W. Jutzi, E. , J. Marz, Jap. J. Appl. Phys. 26, Suppl. 26-3 (1987) pp. 1589-1590; W. Jutzi, E. Crocoll, O. Orung, G. Kramer, IEEE Trans. Magn. A. Schlup, J. Phys. C: Solid State Phys.
2 Quantum Charge Oscillations The fundamental role of quantum charge oscillations was demonstrated for the first time in 1969 by LAMBE and JAKLEVIC  using small capacitance tunnel junctions controlled by a constant-voltage source. More recently random arrays of tunnel junctions have been studied, and very recently the cross-over from the Josephson pair tunnelling regime to the domain dominated by quantum charge oscillations has been demonstrated by varying the ratio Ep/Ee in single junctions in situ .
The frequency characteristics of the conductances G±(ro) approximated in such a way are plotted by curves C in Fig. 72. Higher accuracy is achieved but therefore more elements are used by KRATZ and JUTZI [12J, but unfortunately there is no information on the temperature dependence of the parameters. The admittance of a circuit built up by a finite number of capacitors, inductors and resistors is described mathematically by a so-called "positive" ~s+ (el Figure 6 Circuits modelling the total admittances Yt ± (00), Eq.